Invention Grant
- Patent Title: Power semiconductor module including a multilayer substrate
- Patent Title (中): 功率半导体模块包括多层衬底
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Application No.: US12624622Application Date: 2009-11-24
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Publication No.: US08018047B2Publication Date: 2011-09-13
- Inventor: Reinhold Bayerer , Thomas Hunger
- Applicant: Reinhold Bayerer , Thomas Hunger
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/12 ; H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor module includes a multilayer substrate. The multilayer substrate includes a first metal layer and a first ceramic layer over the first metal layer. An edge of the first ceramic layer extends beyond an edge of the first metal layer. The multilayer substrate includes a second metal layer over the first ceramic layer and a second ceramic layer over the second metal layer. An edge of the second ceramic layer extends beyond an edge of the second metal layer. The multilayer substrate includes a third metal layer over the second ceramic layer.
Public/Granted literature
- US20100065962A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2010-03-18
Information query
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