Invention Grant
- Patent Title: Non-volatile static random access memory (NVSRAM) device
- Patent Title (中): 非易失性静态随机存取存储器(NVSRAM)器件
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Application No.: US12542711Application Date: 2009-08-18
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Publication No.: US08018768B2Publication Date: 2011-09-13
- Inventor: Ping-Chia Shih , Chung-Chin Shih
- Applicant: Ping-Chia Shih , Chung-Chin Shih
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A non-volatile static random access memory (NVSRAM) device includes a volatile circuit and a non-volatile circuit. Under normal operations when an external power is supplied, the volatile circuit can provide fast data access. When the power supply is somehow interrupted, the non-volatile circuit can provide data backup using an inverter circuit and a non-volatile erasable programmable memory (NVEPM) circuit, thereby retaining data previously stored in the volatile circuit.
Public/Granted literature
- US20110044109A1 NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) DEVICE Public/Granted day:2011-02-24
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