A capacitor structure is provided. The capacitor structure comprises a plurality of parallel conductive line levels and a plurality of vias. Each conductive line level comprises first conductive lines parallel to each other and second conductive lines parallel to each other. Also, the first conductive lines on different conductive line levels are aligned to each other and the second conductive lines on different conductive line levels are aligned to each other so as to form first conductive line co-planes and second conductive line co-planes. The vias are located on the conductive line co-planes and between the conductive line levels for connecting the conductive lines on the neighboring conductive line levels. The vias, on a height level of each of the conductive line co-planes, are arranged only on one of the neighboring conductive line co-planes.