Invention Grant
- Patent Title: Multilayer low reflectivity hard mask and process therefor
- Patent Title (中): 多层低反射率硬掩模及其工艺
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Application No.: US12468715Application Date: 2009-05-19
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Publication No.: US08048797B2Publication Date: 2011-11-01
- Inventor: Kouros Ghandehari , Anna M. Minvielle , Marina V. Plat , Hirokazu Tokuno
- Applicant: Kouros Ghandehari , Anna M. Minvielle , Marina V. Plat , Hirokazu Tokuno
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).
Public/Granted literature
- US20100009536A1 MULTILAYER LOW REFLECTIVITY HARD MASK AND PROCESS THEREFOR Public/Granted day:2010-01-14
Information query
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