Invention Grant
US08048811B2 Method for patterning a metallization layer by reducing resist strip induced damage of the dielectric material
有权
通过减少抗蚀剂层引起的电介质材料损伤来图案化金属化层的方法
- Patent Title: Method for patterning a metallization layer by reducing resist strip induced damage of the dielectric material
- Patent Title (中): 通过减少抗蚀剂层引起的电介质材料损伤来图案化金属化层的方法
-
Application No.: US12354884Application Date: 2009-01-16
-
Publication No.: US08048811B2Publication Date: 2011-11-01
- Inventor: Frank Feustel , Thomas Werner , Juergen Boemmels
- Applicant: Frank Feustel , Thomas Werner , Juergen Boemmels
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102008016425 20080331
- Main IPC: H01L21/308
- IPC: H01L21/308
Abstract:
By forming a hardmask layer in combination with one or more cap layers, undue exposure of a sensitive dielectric material to resist stripping etch ambients may be reduced and integrity of the hardmask may also be maintained so that the trench etch process may be performed with a high degree of etch selectivity during the patterning of openings in a metallization layer of a semiconductor device.
Public/Granted literature
Information query
IPC分类:
