Invention Grant
- Patent Title: Method for fabricating metal-oxide semiconductor transistors
- Patent Title (中): 金属氧化物半导体晶体管的制造方法
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Application No.: US12324896Application Date: 2008-11-28
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Publication No.: US08053847B2Publication Date: 2011-11-08
- Inventor: Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
- Applicant: Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
Public/Granted literature
- US20090101894A1 METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS Public/Granted day:2009-04-23
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