Invention Grant
- Patent Title: Resin layer formation method, resin layer formation device, and disk manufacturing method
- Patent Title (中): 树脂层形成方法,树脂层形成装置和盘制造方法
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Application No.: US11597438Application Date: 2005-06-01
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Publication No.: US08088438B2Publication Date: 2012-01-03
- Inventor: Tomokazu Ito , Hisashi Nishigaki , Tsukasa Kawakami , Haruka Narita , Yoji Takizawa , Takumi Hanada , Munenori Iwami
- Applicant: Tomokazu Ito , Hisashi Nishigaki , Tsukasa Kawakami , Haruka Narita , Yoji Takizawa , Takumi Hanada , Munenori Iwami
- Applicant Address: JP Kanagawa
- Assignee: Shibaura Mechatronics Corporation
- Current Assignee: Shibaura Mechatronics Corporation
- Current Assignee Address: JP Kanagawa
- Priority: JP2004-165220 20040603
- International Application: PCT/JP2005/010061 WO 20050601
- International Announcement: WO2005/118159 WO 20051215
- Main IPC: B05D3/12
- IPC: B05D3/12 ; B05D3/06

Abstract:
A resin layer formation method, resin layer formation device, disk and disk manufacturing method for making a resin layer uniform on a substrate before lamination or on a substrate to be coated by a simple procedure are provided. Adhesive A is coated at the inner circumference side while rotating a substrate P at low speed, a first adhesive layer AL1 is formed on the surface of the substrate P by rotating the substrate P at high speed, a step difference section H is formed around a rotation center of the substrate P by irradiating ultraviolet on an area in the inner circumference side of the first adhesive layer AL1 and hardening the area, the adhesive A is coated at the rotation center side from the step difference section H on the substrate P, and a second adhesive layer AL2 is formed on the first adhesive layer AL1 by rotating the substrate P at high speed. The first adhesive layer AL1 and the second adhesive layer AL2 are integrated to form a uniform adhesive layer B as a whole.
Public/Granted literature
- US20080206570A1 Resin Layer Formation Method, Resin Layer Formation Device, and Disk Manufacturing Method Public/Granted day:2008-08-28
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