Invention Grant
- Patent Title: Method of fabricating an ultra dielectric constant (K) dielectric layer
- Patent Title (中): 制造超介电常数（K）介电层的方法
-
Application No.: US11850466Application Date: 2007-09-05
-
Publication No.: US08092861B2Publication Date: 2012-01-10
- Inventor: Mei-Ling Chen , Su-Jen Sung , Chien-Chung Huang
- Applicant: Mei-Ling Chen , Su-Jen Sung , Chien-Chung Huang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: C23C16/30
- IPC: C23C16/30
Abstract:
A fabrication method of an ultra low-k dielectric layer is provided. A deposition process is performed, under the control of a temperature varying program or a pressure varying program, by reacting a dielectric matrix to form porous low-k dielectric layers with a gradient density on a barrier layer over a substrate.
Public/Granted literature
- US20090061201A1 ULTRA LOW DIELECTRIC CONSTANT (K) DIELECTRIC LAYER AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-03-05
Information query
IPC分类:
