Invention Grant
- Patent Title: Method for fabricating MEMS structure
- Patent Title (中): MEMS结构的制造方法
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Application No.: US12849168Application Date: 2010-08-03
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Publication No.: US08096048B2Publication Date: 2012-01-17
- Inventor: Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
- Applicant: Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: B81C1/00
- IPC: B81C1/00

Abstract:
A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and a MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form a MEMS device in the MEMS region.
Public/Granted literature
- US20100317138A1 METHOD FOR FABRICATING MEMS STRUCTURE Public/Granted day:2010-12-16
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