Invention Grant
- Patent Title: Sintered semiconductor material
- Patent Title (中): 烧结半导体材料
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Application No.: US10552548Application Date: 2004-04-09
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Publication No.: US08105923B2Publication Date: 2012-01-31
- Inventor: Alain Straboni
- Applicant: Alain Straboni
- Applicant Address: FR Paris FR Poitiers
- Assignee: Centre National de la Recherche Scientifique,Universite de Poitiers
- Current Assignee: Centre National de la Recherche Scientifique,Universite de Poitiers
- Current Assignee Address: FR Paris FR Poitiers
- Agency: Howard IP Law Group, PC
- Priority: FR0304676 20030414
- International Application: PCT/FR2004/050151 WO 20040409
- International Announcement: WO2004/093202 WO 20041028
- Main IPC: H01L21/04
- IPC: H01L21/04
Abstract:
The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.
Public/Granted literature
- US20070178675A1 Sintered semiconductor material Public/Granted day:2007-08-02
Information query
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