Invention Grant
US08110333B2 Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound
有权
含有新型锍化合物的抗蚀剂组合物，使用抗蚀剂组合物的图案形成方法和新型锍化合物
- Patent Title: Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound
- Patent Title (中): 含有新型锍化合物的抗蚀剂组合物，使用抗蚀剂组合物的图案形成方法和新型锍化合物
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Application No.: US12184780Application Date: 2008-08-01
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Publication No.: US08110333B2Publication Date: 2012-02-07
- Inventor: Sou Kamimura , Yasutomo Kawanishi , Kenji Wada , Tomotaka Tsuchimura
- Applicant: Sou Kamimura , Yasutomo Kawanishi , Kenji Wada , Tomotaka Tsuchimura
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-203152 20070803
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30
Abstract:
A resist composition includes (A) a compound represented by the following formula (I): wherein each of R1 to R13 independently represents a hydrogen atom or a substituent, provided that at least one of R1 to R13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X− represents an anion containing a proton acceptor functional group.
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Information query
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