公开(公告)号：US09709892B2

公开(公告)日：2017-07-18

申请号：US13637269

申请日：2011-03-25

Applicant: Shohei Kataoka ,  Kaoru Iwato ,  Sou Kamimura ,  Toru Tsuchihashi ,  Yuichiro Enomoto ,  Kana Fujii ,  Kazuyoshi Mizutani ,  Shinji Tarutani ,  Keita Kato

Inventor： Shohei Kataoka ,  Kaoru Iwato ,  Sou Kamimura ,  Toru Tsuchihashi ,  Yuichiro Enomoto ,  Kana Fujii ,  Kazuyoshi Mizutani ,  Shinji Tarutani ,  Keita Kato

IPC: G03F7/30 ,  G03F7/039 ,  G03F7/075 ,  C08F220/28 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038 ,  C08F232/08

CPC classification number: G03F7/30 ,  C08F220/28 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24802

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧−1.5 when exposed to actinic rays or radiation.

公开(公告)号：US09551935B2

公开(公告)日：2017-01-24

申请号：US13636965

申请日：2011-03-25

Applicant: Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

Inventor： Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

IPC: G03F7/32 ,  G03F7/039 ,  G03F7/20 ,  G03F7/004 ,  G03F7/075

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/2041 ,  Y10T428/24

Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. ΔSP=SPF−SPI  (1)

Abstract translation: 提供了一种形成图案的方法，确保优异的曝光宽容度（EL）和聚焦纬度（焦深DOF）。 形成图案的方法包括（A）从抗蚀剂组合物形成膜，抗蚀剂组合物，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜，从而形成 负面模式。 抗蚀剂组合物含有（a）在被酸作用时被分解的树脂，由下式（1）表示的＆Dgr; SP为2.5（MPa）1/2以上，（b） 被组合以在暴露于光化射线或辐射时产生酸，和（c）溶剂。 ＆Dgr; SP = SPF-SPI（1）

公开(公告)号：US09223219B2

公开(公告)日：2015-12-29

申请号：US13521164

申请日：2011-01-07

Applicant: Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Kaoru Iwato ,  Keita Kato ,  Akinori Shibuya

Inventor： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Kaoru Iwato ,  Keita Kato ,  Akinori Shibuya

IPC: G03F7/30 ,  G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041

Abstract: Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

Abstract translation: 提供了一种图案形成方法，其包括（i）从光化射线敏感性或辐射敏感性树脂组合物形成膜的步骤，（ii）曝光所述膜的步骤，和（iii）使所述曝光膜显影的步骤 通过使用含有机溶剂的显影剂，其中所述光化学射线敏感性或辐射敏感性树脂组合物包含（A）能够通过酸的作用降低对含有机溶剂的显影剂的溶解度的树脂，（B） 能够在用光化学射线或辐射照射时产生酸的化合物，（D）溶剂，和（G）具有氟原子和硅原子中的至少一个并具有碱性或能够增加碱度的化合物 通过酸的作用。

公开(公告)号：US09097973B2

公开(公告)日：2015-08-04

申请号：US13172273

申请日：2011-06-29

Applicant: Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Kaoru Iwato ,  Keita Kato ,  Kana Fujii

Inventor： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Kaoru Iwato ,  Keita Kato ,  Kana Fujii

IPC: G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/422

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Abstract translation: 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成为膜，（b）将膜曝光，和（c）用含有机溶剂的显影剂显影曝光的膜，其中 显影剂含有基于显影剂总质量为0至小于500ppm的醇化合物（X）。

公开(公告)号：US20130113082A1

公开(公告)日：2013-05-09

申请号：US13808496

申请日：2011-08-26

Applicant: Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Kana Fujii

Inventor： Yuichiro Enomoto ,  Shinji Tarutani ,  Sou Kamimura ,  Keita Kato ,  Kana Fujii

IPC: G03F7/40 ,  G03F7/20 ,  H01L29/02

CPC classification number: G03F7/40 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405 ,  H01L29/02

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer.

Abstract translation: 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成为膜，（b）使膜暴露于光，（c）用含有机溶剂的显影剂显影曝光的膜，和（d ）用含有有机溶剂的漂洗液冲洗显影的膜，冲洗液的比重大于显影剂的比重。

公开(公告)号：US20130011785A1

公开(公告)日：2013-01-10

申请号：US13636965

申请日：2011-03-25

Applicant: Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

Inventor： Keita Kato ,  Shinji Tarutani ,  Toru Tsuchihashi ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kana Fujii ,  Kaoru Iwato ,  Shohei Kataoka ,  Kazuyoshi Mizutani

IPC: G03F7/004 ,  H01L29/02 ,  B32B3/10 ,  G03F7/20 ,  G03F7/075

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/2041 ,  Y10T428/24

Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. ΔSP=SPF−SPI  (1)

Abstract translation: 提供了一种形成图案的方法，确保优异的曝光宽容度（EL）和聚焦纬度（焦深DOF）。 形成图案的方法包括（A）从抗蚀剂组合物形成膜，抗蚀剂组合物，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜，从而形成 负面模式。 抗蚀剂组合物含有（a）在被酸作用时被分解的树脂，由下式（1）表示的＆Dgr; SP为2.5（MPa）1/2以上，（b） 被组合以在暴露于光化射线或辐射时产生酸，和（c）溶剂。 ＆Dgr; SP = SPF-SPI（1）

公开(公告)号：US20120322007A1

公开(公告)日：2012-12-20

申请号：US13579733

申请日：2011-02-18

Applicant: Keita Kato ,  Shinji Tarutani ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kaoru Iwato

Inventor： Keita Kato ,  Shinji Tarutani ,  Sou Kamimura ,  Yuichiro Enomoto ,  Kaoru Iwato

IPC: G03F7/027 ,  G03F7/20

CPC classification number: G03F7/0382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/325

Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer containing an organic solvent, wherein the resist composition contains (A) a resin, (B) a compound capable of generating a specific acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.

Abstract translation: 一种图案形成方法，包括（i）从化学放大抗蚀剂组合物形成膜的步骤，（ii）曝光所述膜的步骤，以及（iii）通过使用含有有机溶剂的显影剂使所述曝光膜显影的步骤 其中，抗蚀剂组合物含有（A）树脂，（B）能够在光化射线或辐射照射时能够产生特定酸的化合物，（C）交联剂和（D）溶剂。

公开(公告)号：US20120052449A1

公开(公告)日：2012-03-01

申请号：US13216903

申请日：2011-08-24

Applicant: Keita KATO ,  Sou KAMIMURA ,  Yuichiro ENOMOTO ,  Kaoru IWATO ,  Shohei KATAOKA ,  Shoichi SAITOH

Inventor： Keita KATO ,  Sou KAMIMURA ,  Yuichiro ENOMOTO ,  Kaoru IWATO ,  Shohei KATAOKA ,  Shoichi SAITOH

IPC: G03F7/20 ,  G03F7/32

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/40

Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.

Abstract translation: 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成在膜中，（b）将膜曝光，和（c）用含有第一有机溶剂的显影剂显影曝光的膜，其中在 显影剂，每个具有0.3μm或更大直径的颗粒的密度为30个/ ml或更小。

公开(公告)号：US20110183258A1

公开(公告)日：2011-07-28

申请号：US12673096

申请日：2008-08-11

Applicant: Hidenori Takahashi ,  Kenji Wada ,  Sou Kamimura

Inventor： Hidenori Takahashi ,  Kenji Wada ,  Sou Kamimura

IPC: G03F7/004 ,  G03F7/20 ,  C07C309/73 ,  C07C69/716 ,  C07D319/12 ,  C07D311/94

CPC classification number: C07C309/72 ,  C07C69/716 ,  C07C309/65 ,  C07C309/74 ,  C07C311/48 ,  C07C317/44 ,  C07C317/46 ,  C07C323/20 ,  C07C2601/14 ,  C07C2602/08 ,  C07C2602/10 ,  C07C2602/42 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041

Abstract: A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.

Abstract translation: 一种正型抗蚀剂组合物，其包含（A）在通过光化射线或辐射照射时能够产生酸的化合物，（B）能够通过酸的作用增加在碱性显影剂中的溶解度的树脂，和（C） 提供具有特定结构的化合物，其通过酸的作用而分解以产生酸，使用正性抗蚀剂组合物的图案形成方法和用于正性抗蚀剂组合物的化合物作为正性抗蚀剂组合物，其表现出良好的性能 使用正性抗蚀剂组合物的图案形成方法和用于正性抗蚀剂组合物的化合物的图案形成方法，线条粗糙度，图案塌陷，在正常曝光（干曝光）中的灵敏度和分辨率，浸渍曝光和双重曝光。

公开(公告)号：US20080085468A1

公开(公告)日：2008-04-10

申请号：US11864049

申请日：2007-09-28

Applicant: Sou KAMIMURA ,  Kenji WADA ,  Yasutomo KAWANISHI

Inventor： Sou KAMIMURA ,  Kenji WADA ,  Yasutomo KAWANISHI

IPC: G03C1/00

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

Abstract: A resist composition, includes: (B) a polymer having a group capable of decomposing under an action of an acid and having a weight average molecular weight of 1,000 to 5,000, of which solubility in an alkali developer increases under an action of an acid; and (Z) a compound containing a sulfonium cation having a structure represented by formula (Z-1): wherein Y1 to Y13 each independently represents a hydrogen atom or a substituent, and adjacent members of Y1 to Y13 may combine with each other to form a ring; and Z represents a single bond or a divalent linking group.

Abstract translation: 抗蚀剂组合物包括：（B）具有能够在酸的作用下分解并且重均分子量为1,000至5,000的基团的聚合物，其在碱性显影剂中的溶解度在酸的作用下增加; 和（Z）含有具有由式（Z-1）表示的结构的锍阳离子的化合物：其中Y 1至Y 13各自独立地表示氢原子或 取代基，Y 1〜Y 3的相邻成员可以相互结合形成环; Z表示单键或二价连接基团。