Invention Grant
US08111519B2 Hybrid structure of multi-layer substrates and manufacture method thereof 有权
多层基板的混合结构及其制造方法

  • Patent Title: Hybrid structure of multi-layer substrates and manufacture method thereof
  • Patent Title (中): 多层基板的混合结构及其制造方法
  • Application No.: US13015725
    Application Date: 2011-01-28
  • Publication No.: US08111519B2
    Publication Date: 2012-02-07
  • Inventor: Chih-kuang Yang
  • Applicant: Chih-kuang Yang
  • Applicant Address: TW Hsinchu
  • Assignee: Princo Corp.
  • Current Assignee: Princo Corp.
  • Current Assignee Address: TW Hsinchu
  • Priority: TW95145482A 20061206
  • Main IPC: H05K7/00
  • IPC: H05K7/00
Hybrid structure of multi-layer substrates and manufacture method thereof
Abstract:
A hybrid structure of multi-layer substrates comprises a first multi-layer substrate and a second multi-layer substrate. The first multi-layer substrate stacks up first metal layers, first dielectric layers alternately and has VIAs. A border district of a first metal layer connects with a border district of the corresponding first dielectric layer. The border districts are separated from adjacent first metal layers and adjacent first dielectric layers. The second multi-layer substrate stacks up second metal layers and second dielectric layers alternately. A border district of a second metal layer connects with a border district of the corresponding second dielectric layer. The border districts are separated from adjacent second metal layers and adjacent second dielectric layers. The VIAs are located at the border districts of the first dielectric layers and each VIA has electric conductor therein to connect one first metal layer with one second metal layer.
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