Invention Grant
- Patent Title: Electron-emitting device, method of manufacturing the same, electron source, and image display apparatus
- Patent Title (中): 电子发射器件,其制造方法,电子源和图像显示装置
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Application No.: US12481099Application Date: 2009-06-09
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Publication No.: US08125134B2Publication Date: 2012-02-28
- Inventor: Akira Shimazu
- Applicant: Akira Shimazu
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-168752 20080627
- Main IPC: H01J63/04
- IPC: H01J63/04

Abstract:
Provided is an electron-emitting device which is excellent in electron-emitting efficiency, and may obtain a large electron-emitting amount and stable electron-emitting characteristics. The electron-emitting device includes: a first conductive film and a second conductive film which are provided through a first gap; first carbon films connected to the first conductive film; and second carbon films which are connected to the second conductive film, and are opposed to the first carbon films through second and third gaps. Continuous concave portions are provided in the second and third gaps.
Public/Granted literature
- US20090322206A1 ELECTRON-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, ELECTRON SOURCE, AND IMAGE DISPLAY APPARATUS Public/Granted day:2009-12-31
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