Invention Grant
- Patent Title: Method of measuring numerical aperture of exposure machine, control wafer, photomask, and method of monitoring numerical aperture of exposure machine
- Patent Title (中): 测量曝光机,控制晶片,光掩模数值孔径及曝光机数值孔径监测方法
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Application No.: US12337606Application Date: 2008-12-17
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Publication No.: US08134708B2Publication Date: 2012-03-13
- Inventor: Chien-Min Wu , Chien-Chih Chen
- Applicant: Chien-Min Wu , Chien-Chih Chen
- Applicant Address: TW Hsinchu
- Assignee: Maxchip Electronics Corp.
- Current Assignee: Maxchip Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW97142747A 20081105
- Main IPC: G01B11/00
- IPC: G01B11/00

Abstract:
A method of measuring a numerical aperture of an exposure machine is described. A control wafer having vernier marks thereon and an aberration mask having pinholes therein are provided, wherein each pinhole corresponds to a vernier mark in position. A lithography process using the exposure machine and the aberration mask is performed to the control wafer, so as to form over each vernier mark a photoresist pattern having the same shape of the illumination pattern of the light source of the exposure machine. The numerical aperture of the exposure machine is then derived from a graduation of the vernier mark corresponding to an outer edge of the photoresist pattern.
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