Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12719033Application Date: 2010-03-08
-
Publication No.: US08138612B2Publication Date: 2012-03-20
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harnes, Dickey & Pierce, P.L.C.
- Priority: JP2005-201798 20050711
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device including: a semiconductor substrate including an electrode; a resin protrusion formed on the semiconductor substrate and including a plurality of first portions and a second portion disposed between two of the first portions adjacent to each other; and an interconnect electrically connected to the electrode and extending over one of the first portions of the resin protrusion. A lower portion of a side surface of the second portion includes a portion which extends in a direction intersecting a direction in which the resin protrusion extends.
Public/Granted literature
- US20100155944A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-24
Information query
IPC分类: