Invention Grant
- Patent Title: Method for developing a photoresist
- Patent Title (中): 光刻胶显影方法
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Application No.: US11771898Application Date: 2007-06-29
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Publication No.: US08148055B2Publication Date: 2012-04-03
- Inventor: Klaus-Guenter Oppermann , Martin Franosch
- Applicant: Klaus-Guenter Oppermann , Martin Franosch
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G03F7/32
- IPC: G03F7/32 ; G03F7/42
Abstract:
A method for developing a photoresist includes applying a first developer to the photoresist to remove non-cross-linked areas of the photoresist, and applying a second developer to the photoresist to remove remaining non-cross-linked areas of the photoresist, wherein the first developer and the second developer differ in their compositions.
Public/Granted literature
- US20080020330A1 Method for Developing a Photoresist Public/Granted day:2008-01-24
Information query
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