Invention Grant
- Patent Title: Semiconductor device with through substrate via
- Patent Title (中): 半导体器件通过基板通孔
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Application No.: US12761413Application Date: 2010-04-16
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Publication No.: US08148824B2Publication Date: 2012-04-03
- Inventor: Shian-Jyh Lin
- Applicant: Shian-Jyh Lin
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A through substrate via having a low stress is provided. The through substrate via is positioned in a substrate. The through substrate via includes: an outer tube penetrating the substrate; at least one inner tube disposed within the outer tube; a dielectric layer lining on a side wall of the outer tube, and a side wall of the inner tube; a strength-enhanced material filling the inner tube; and a conductive layer filling the outer tube.
Public/Granted literature
- US20110254169A1 SEMICONDUCTOR DEVICE WITH THROUGH SUBSTRATE VIA Public/Granted day:2011-10-20
Information query
IPC分类:
