Invention Grant
US08149384B2 Method and apparatus for extracting dose and focus from critical dimension data
失效
从关键尺寸数据中提取剂量和重点的方法和装置
- Patent Title: Method and apparatus for extracting dose and focus from critical dimension data
- Patent Title (中): 从关键尺寸数据中提取剂量和重点的方法和装置
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Application No.: US11958086Application Date: 2007-12-17
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Publication No.: US08149384B2Publication Date: 2012-04-03
- Inventor: Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
- Applicant: Siddharth Chauhan , Kevin R. Lensing , James Broc Stirton
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Main IPC: G03B27/52
- IPC: G03B27/52
Abstract:
A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter. The received dose and focus parameters are compared to the commanded dose and focus parameters to characterize the photolithography system.
Public/Granted literature
- US20090153818A1 METHOD AND APPARATUS FOR EXTRACTING DOSE AND FOCUS FROM CRITICAL DIMENSION DATA Public/Granted day:2009-06-18
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