Invention Grant
US08153510B2 Semiconductor bond pad patterns and method of formation 有权
半导体焊盘图案和形成方法

  • Patent Title: Semiconductor bond pad patterns and method of formation
  • Patent Title (中): 半导体焊盘图案和形成方法
  • Application No.: US12799444
    Application Date: 2010-04-26
  • Publication No.: US08153510B2
    Publication Date: 2012-04-10
  • Inventor: James Jen-Ho Wang
  • Applicant: James Jen-Ho Wang
  • Applicant Address: US AZ Phoenix
  • Assignee: Power Gold LLC
  • Current Assignee: Power Gold LLC
  • Current Assignee Address: US AZ Phoenix
  • Agent Edward James Mischell
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Semiconductor bond pad patterns and method of formation
Abstract:
In a semiconductor wafer, the polyimide film underneath a power metal structure is partially etched to create corresponding surface depressions of the conformal top power metal. The depressions at the surface of power metal are visible under optical microscopy. Arrangement of the depressions in a pattern facilitates the alignment of probe needles, set-up of automated wire bonding and microscopic inspection for precise alignment of wire bonds.
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