Invention Grant
- Patent Title: Control method for nonvolatile memory and semiconductor device
- Patent Title (中): 非易失性存储器和半导体器件的控制方法
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Application No.: US12494817Application Date: 2009-06-30
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Publication No.: US08154939B2Publication Date: 2012-04-10
- Inventor: Yoshinori Mochizuki , Masaharu Ukeda , Shigemasa Shiota
- Applicant: Yoshinori Mochizuki , Masaharu Ukeda , Shigemasa Shiota
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2008-205414 20080808
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
In a nonvolatile memory, the threshold is restored to a state before changing, without increasing number of writing undesirably. In a system including a nonvolatile memory, a random number generator, and a controller accessible to the nonvolatile memory, every time access to the nonvolatile memory is performed, the controller determines a refresh-targeted area, based on a random number generated by the random number generator. The controller is made to perform refresh control to re-write to the refresh-targeted area. By such refresh control, the threshold is restored to a state before changing, without increasing the number of writing undesirably.
Public/Granted literature
- US20100034024A1 Control Method For Nonvolatile Memory and Semiconductor Device Public/Granted day:2010-02-11
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