Invention Grant
- Patent Title: Article with PHEMA lift-off layer and method therefor
- Patent Title (中): 文章用PHEMA剥离层及其方法
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Application No.: US12062058Application Date: 2008-04-03
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Publication No.: US08163188B2Publication Date: 2012-04-24
- Inventor: Kenneth Raymond Carter , Sarav Bharat Jhaveri
- Applicant: Kenneth Raymond Carter , Sarav Bharat Jhaveri
- Applicant Address: US MA Boston
- Assignee: The University of Massachusetts
- Current Assignee: The University of Massachusetts
- Current Assignee Address: US MA Boston
- Agency: Cantor Colburn LLP
- Main IPC: B05D3/06
- IPC: B05D3/06 ; B05D5/00

Abstract:
A method of forming a patterned functional layer on a substrate using a poly(hydroxyethyl methacrylate) lift-off layer is described. The method can be used with substrates that would not tolerate the organic solvents required for processing of known poly(methyl methacrylate) lift-off layers. When used in combination with known nanoimprint lithography and step-and-flash imprint lithography techniques, the method can be used to generate patterned functional structures with dimensions as small as five nanometers.
Public/Granted literature
- US20090011141A1 ARTICLE WITH PHEMA LIFT-OFF LAYER AND METHOD THEREFOR Public/Granted day:2009-01-08
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