Invention Grant
- Patent Title: Method of forming a contact hole
- Patent Title (中): 形成接触孔的方法
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Application No.: US12854913Application Date: 2010-08-12
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Publication No.: US08168374B2Publication Date: 2012-05-01
- Inventor: Pei-Yu Chou , Jiunn-Hsiung Liao
- Applicant: Pei-Yu Chou , Jiunn-Hsiung Liao
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance.
Public/Granted literature
- US20100304569A1 METHOD OF FORMING A CONTACT HOLE Public/Granted day:2010-12-02
Information query
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