Invention Grant
- Patent Title: Through-silicon via structure and method for making the same
- Patent Title (中): 通硅结构及其制作方法
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Application No.: US13215246Application Date: 2011-08-23
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Publication No.: US08168533B2Publication Date: 2012-05-01
- Inventor: Chien-Li Kuo
- Applicant: Chien-Li Kuo
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/538
- IPC: H01L23/538
Abstract:
A through-silicon via structure includes a substrate with a first side and a second side, a through-silicon hole connecting the first side and the second side and filled with a conductive material, a passivation layer disposed on and contacting the first side and covering the through-silicon hole, and a protection ring surrounding but not contacting the through-silicon hole and exposed by the first side and the second side. The protection ring is filled with an insulating material.
Public/Granted literature
- US20110300708A1 THROUGH-SILICON VIA STRUCTURE AND METHOD FOR MAKING THE SAME Public/Granted day:2011-12-08
Information query
IPC分类:
