Invention Grant
- Patent Title: Semiconductor device including capacitor element and method of manufacturing the same
- Patent Title (中): 包括电容器元件的半导体器件及其制造方法
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Application No.: US12539723Application Date: 2009-08-12
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Publication No.: US08169051B2Publication Date: 2012-05-01
- Inventor: Tetsuo Yoshimura , Kenichi Watanabe , Satoshi Otsuka
- Applicant: Tetsuo Yoshimura , Kenichi Watanabe , Satoshi Otsuka
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively.
Public/Granted literature
- US20090294902A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-12-03
Information query
IPC分类:
