Invention Grant
- Patent Title: Method for forming embedded circuit
- Patent Title (中): 嵌入式电路的形成方法
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Application No.: US13155375Application Date: 2011-06-07
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Publication No.: US08171626B1Publication Date: 2012-05-08
- Inventor: Cheng-Po Yu , Chi-Min Chang
- Applicant: Cheng-Po Yu , Chi-Min Chang
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW99146584A 20101229
- Main IPC: H05K3/02
- IPC: H05K3/02 ; H05K3/10 ; H05K3/00 ; H01R9/00 ; H01R43/00

Abstract:
A method for forming an embedded circuit is disclosed. First, a substrate including a dielectric layer is provided. Second, the dielectric layer is entirely covered by a dummy layer. Then, the dummy layer is patterned and a trench is formed in the dielectric layer at the same time. Later, a seed layer is formed to entirely cover the dummy layer and the trench. Next, the dummy layer is removed and the seed layer covering the dummy layer is removed, too. Afterwards, a metal layer is filled in the trench to form an embedded circuit embedded in the dielectric layer.
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