Invention Grant
- Patent Title: Method for forming a sintered semiconductor material
- Patent Title (中): 形成烧结半导体材料的方法
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Application No.: US12184703Application Date: 2008-08-01
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Publication No.: US08192648B2Publication Date: 2012-06-05
- Inventor: Alain Straboni
- Applicant: Alain Straboni
- Applicant Address: GF Buxerolles
- Assignee: S'Tile
- Current Assignee: S'Tile
- Current Assignee Address: GF Buxerolles
- Agency: Howard IP Law Group, PC
- Priority: FR0304676 20030414
- Main IPC: H01B1/00
- IPC: H01B1/00
Abstract:
A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.
Public/Granted literature
- US20090039319A1 SINTERED SEMICONDUCTOR MATERIAL Public/Granted day:2009-02-12
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