Invention Grant
- Patent Title: Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
- Patent Title (中): 提高漏电性能并减少半导体器件电迁移的方法
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Application No.: US12338582Application Date: 2008-12-18
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Publication No.: US08192805B2Publication Date: 2012-06-05
- Inventor: Noel Russell , Steven Sherman , John J. Hautala
- Applicant: Noel Russell , Steven Sherman , John J. Hautala
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C14/48
- IPC: C23C14/48 ; C23C14/02 ; C23C14/58 ; B05D5/12 ; B05D3/06 ; H01L21/3115 ; H01L21/3215
Abstract:
Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
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