Invention Grant
- Patent Title: Bipolar junction transistor integrated with PIP capacitor and method for making the same
- Patent Title (中): 与PIP电容集成的双极结晶体管及其制造方法
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Application No.: US12437550Application Date: 2009-05-07
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Publication No.: US08193605B2Publication Date: 2012-06-05
- Inventor: Jian-Bin Shiu
- Applicant: Jian-Bin Shiu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A bipolar junction transistor (BJT) integrated with a PIP capacitor includes a substrate including a bipolar junction transistor region and a PIP capacitor region, a bipolar junction transistor disposed in the bipolar junction transistor region and extending an isolation layer to the PIP capacitor region and a base poly layer disposed on the isolation layer, and a PIP capacitor disposed in the PIP capacitor region and including a lower poly layer, the isolation layer and the base poly layer to selectively form a PIP capacitor.
Public/Granted literature
- US20100283123A1 BIPOLAR JUNCTION TRANSISTOR INTEGRATED WITH PIP CAPACITOR AND METHOD FOR MAKING THE SAME Public/Granted day:2010-11-11
Information query
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