Invention Grant
- Patent Title: Electron beam apparatus and electron beam inspection method
- Patent Title (中): 电子束装置和电子束检查方法
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Application No.: US12985633Application Date: 2011-01-06
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Publication No.: US08207498B2Publication Date: 2012-06-26
- Inventor: Muneyuki Fukuda , Tomoyasu Shojo , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki , Ichiro Tachibana
- Applicant: Muneyuki Fukuda , Tomoyasu Shojo , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki , Ichiro Tachibana
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-290772 20061026
- Main IPC: H01J37/28
- IPC: H01J37/28

Abstract:
An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.
Public/Granted literature
- US20110101223A1 Electron Beam Apparatus And Electron Beam Inspection Method Public/Granted day:2011-05-05
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