Invention Grant
- Patent Title: Manufacturing method of emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US12785634Application Date: 2010-05-24
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Publication No.: US08211492B2Publication Date: 2012-07-03
- Inventor: Shunpei Yamazaki , Masakazu Murakami , Ryoji Nomura , Satoshi Seo
- Applicant: Shunpei Yamazaki , Masakazu Murakami , Ryoji Nomura , Satoshi Seo
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-327373 20021111
- Main IPC: B05D5/06
- IPC: B05D5/06 ; B05D3/02 ; B05D1/02

Abstract:
The present invention is a fabrication method of a light-emitting device characterized by ejecting a solution containing a luminescent material toward an anode or a cathode under a reduced pressure and characterized in that in a duration before the solution is arrived at the anode or the cathode, the solvent in the solution is volatilized, the remaining part of the luminescent material is deposited on the anode or the cathode, and thereby formed a light-emitting layer. By the present invention, a baking process for thickness reduction is not required after applying the solution. Accordingly, it is possible to provide a fabrication method with high throughput although the method is low in cost and simple.
Public/Granted literature
- US20100233358A1 Manufacturing Method of Emitting Device Public/Granted day:2010-09-16
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