Invention Grant
- Patent Title: Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment
- Patent Title (中): 通过使用氢基热化学处理形成用于铜金属化的电介质盖层的方法
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Application No.: US11970876Application Date: 2008-01-08
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Publication No.: US08211795B2Publication Date: 2012-07-03
- Inventor: Joerg Hohage , Volker Kahlert , Hartmut Ruelke , Ulrich Mayer
- Applicant: Joerg Hohage , Volker Kahlert , Hartmut Ruelke , Ulrich Mayer
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson
- Priority: DE102007022621 20070515
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A new technique is disclosed in which a barrier/cap layer for a copper based metal line is formed by using a thermal-chemical treatment based on hydrogen with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma based deposition of silicon based dielectric barrier material. The thermal-chemical cleaning process is performed in the absence of any plasma ambient.
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