Invention Grant
- Patent Title: Semiconductor wafer coated with a filled, spin-coatable material
- Patent Title (中): 涂覆有填充的可旋涂材料的半导体晶片
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Application No.: US12512606Application Date: 2009-07-30
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Publication No.: US08212369B2Publication Date: 2012-07-03
- Inventor: Eunsook Chae
- Applicant: Eunsook Chae
- Applicant Address: DE Duesseldorf
- Assignee: Henkel AG & Co. KGaA
- Current Assignee: Henkel AG & Co. KGaA
- Current Assignee Address: DE Duesseldorf
- Agent Jane E. Gennaro
- Main IPC: H01L23/29
- IPC: H01L23/29
Abstract:
This invention is a semiconductor wafer having an active side and a back side opposite the active side, which back side is coated with a filled, spin-coatable coating, wherein the coating comprises a resin and a spherical filler characterized by an average particle diameter of greater than 2 μm and a single peak particle size distribution. In another embodiment the invention is a method for producing a spin-coatable, B-stageable coating with a thixotropic index of 1.2 or less. In a third embodiment the invention is a method for producing a coated semiconductor wafer.
Public/Granted literature
- US20100193973A1 SEMICONDUCTOR WAFER COATED WITH A FILLED, SPIN-COATABLE MATERIAL Public/Granted day:2010-08-05
Information query
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