Invention Grant
- Patent Title: Oxyfluoride in the form of a film and preparation method
- Patent Title (中): 氟氧化物以薄膜形式制备方法
-
Application No.: US12094256Application Date: 2006-11-13
-
Publication No.: US08221902B2Publication Date: 2012-07-17
- Inventor: David Grosso , Cédric Boissiere , Clément Sanchez
- Applicant: David Grosso , Cédric Boissiere , Clément Sanchez
- Applicant Address: FR Paris FR Paris
- Assignee: Centre National de la Recherche Scientifique,Universite Pierre et Marie Curie
- Current Assignee: Centre National de la Recherche Scientifique,Universite Pierre et Marie Curie
- Current Assignee Address: FR Paris FR Paris
- Agency: Merchant & Gould
- Priority: FR0511659 20051117
- International Application: PCT/FR2006/002510 WO 20061113
- International Announcement: WO2007/057551 WO 20070524
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B05D3/02

Abstract:
The invention relates to a nanostructured porous oxyfluoride film deposited onto a substrate, to a method for its production, and also to various applications.The oxyfluoride has a porous semicrystalline structure and a refractive index of 1.08 to 1.25, measured in the visible range for a relative humidity level below 80%. Its chemical composition corresponds to the formula (Mg(1−x)Cax)(1−y)MyF(2+(n−2)y−2z−t)Oz(OH)tM′w in which n is the valency of M, n being 1 to 4, M represents at least one element chosen from Al, Si, Ge and Ga, M′ represents at least one element chosen from the group composed of Co, Cr, Ni, Fe, Cu, Sb, Ag, Pd, Cd, Au, Sn, Pb, Ce, Nd, Pr, Eu, Yb, Tb, Dy, Er and Gd, and 0≦w 0 and t
Public/Granted literature
- US20090305028A1 OXYFLUORIDE IN THE FORM OF A FILM AND PREPARATION METHOD Public/Granted day:2009-12-10
Information query