Invention Grant
US08222139B2 Chemical mechanical polishing (CMP) processing of through-silicon via (TSV) and contact plug simultaneously
有权
通过硅（TSV）和接触插塞同时进行化学机械抛光（CMP）处理
- Patent Title: Chemical mechanical polishing (CMP) processing of through-silicon via (TSV) and contact plug simultaneously
- Patent Title (中): 通过硅（TSV）和接触插塞同时进行化学机械抛光（CMP）处理
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Application No.: US12750364Application Date: 2010-03-30
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Publication No.: US08222139B2Publication Date: 2012-07-17
- Inventor: Ming-Fa Chen , I-Ching Lin
- Applicant: Ming-Fa Chen , I-Ching Lin
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a contact plug and a TSV structure, respectively. In some embodiments, the removing step is performed by a CMP process.
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