Invention Grant
- Patent Title: System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
- Patent Title (中): 通过优化电磁能吸收来加热半导体晶片的系统和工艺
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Application No.: US12270377Application Date: 2008-11-13
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Publication No.: US08222570B2Publication Date: 2012-07-17
- Inventor: Paul Janis Timans
- Applicant: Paul Janis Timans
- Applicant Address: US CA Fremont
- Assignee: Mattson Technology, Inc.
- Current Assignee: Mattson Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Dority & Manning, P.A.
- Main IPC: F27B5/14
- IPC: F27B5/14 ; C23C16/00
Abstract:
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
Public/Granted literature
- US20090098742A1 System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy Public/Granted day:2009-04-16
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