Invention Grant
- Patent Title: Semiconductor heterostructure diodes
- Patent Title (中): 半导体异质结二极管
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Application No.: US13008874Application Date: 2011-01-18
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Publication No.: US08237198B2Publication Date: 2012-08-07
- Inventor: Yifeng Wu , Rongming Chu , Primit Parikh , Umesh Mishra , Ilan Ben-Yaacov , Likun Shen
- Applicant: Yifeng Wu , Rongming Chu , Primit Parikh , Umesh Mishra , Ilan Ben-Yaacov , Likun Shen
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/739

Abstract:
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
Public/Granted literature
- US20110127541A1 SEMICONDUCTOR HETEROSTRUCTURE DIODES Public/Granted day:2011-06-02
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