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US08237198B2 Semiconductor heterostructure diodes 有权
半导体异质结二极管

Semiconductor heterostructure diodes
Abstract:
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
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