Invention Grant
US08237206B2 CMOS image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for CMOS image sensor
有权
CMOS图像传感器，其制造方法以及CMOS图像传感器的暗漏和串扰的抑制方法
- Patent Title: CMOS image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for CMOS image sensor
- Patent Title (中): CMOS图像传感器，其制造方法以及CMOS图像传感器的暗漏和串扰的抑制方法
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Application No.: US12189815Application Date: 2008-08-12
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Publication No.: US08237206B2Publication Date: 2012-08-07
- Inventor: Hsin-Ping Wu
- Applicant: Hsin-Ping Wu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L31/00
Abstract:
A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.
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