Invention Grant
US08242576B2 Protection layer for preventing laser damage on semiconductor devices
有权
用于防止半导体器件上的激光损伤的保护层
- Patent Title: Protection layer for preventing laser damage on semiconductor devices
- Patent Title (中): 用于防止半导体器件上的激光损伤的保护层
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Application No.: US11186581Application Date: 2005-07-21
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Publication No.: US08242576B2Publication Date: 2012-08-14
- Inventor: Jian-Hong Lin , Kang-Cheng Lin , Tzu-Li Lee
- Applicant: Jian-Hong Lin , Kang-Cheng Lin , Tzu-Li Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor structure prevents energy that is used to blow a fuse from causing damage. The semiconductor structure includes a device, guard ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. The seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.
Public/Granted literature
- US20070018279A1 Protection layer for preventing laser damage on semiconductor devices Public/Granted day:2007-01-25
Information query
IPC分类:
