Invention Grant
- Patent Title: Manufacturing method of electronic element
- Patent Title (中): 电子元件的制造方法
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Application No.: US12010517Application Date: 2008-01-25
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Publication No.: US08258061B2Publication Date: 2012-09-04
- Inventor: Yasuhiro Iguchi , Nobuyuki Mitsui
- Applicant: Yasuhiro Iguchi , Nobuyuki Mitsui
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JP2007-022535 20070201
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.
Public/Granted literature
- US20080188078A1 Manufacturing method of electronic element Public/Granted day:2008-08-07
Information query
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