Invention Grant
- Patent Title: Ion beam device
- Patent Title (中): 离子束装置
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Application No.: US13144620Application Date: 2010-01-08
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Publication No.: US08263943B2Publication Date: 2012-09-11
- Inventor: Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Noriaki Arai , Tohru Ishitani
- Applicant: Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Noriaki Arai , Tohru Ishitani
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2009-006306 20090115
- International Application: PCT/JP2010/000086 WO 20100108
- International Announcement: WO2010/082466 WO 20100722
- Main IPC: H01J49/10
- IPC: H01J49/10 ; H01J37/28

Abstract:
Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.
Public/Granted literature
- US20110266465A1 ION BEAM DEVICE Public/Granted day:2011-11-03
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