Invention Grant
- Patent Title: Plasma source for large size substrate
- Patent Title (中): 等离子源用于大尺寸基板
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Application No.: US12852804Application Date: 2010-08-09
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Publication No.: US08264153B2Publication Date: 2012-09-11
- Inventor: Hongseub Kim
- Applicant: Hongseub Kim
- Applicant Address: KR Suwon-si
- Assignee: Jehara Corporation
- Current Assignee: Jehara Corporation
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J17/26 ; H01J61/28 ; H05B31/26

Abstract:
A plasma source for a substrate is provided. The plasma source may include a source electrode and an impedance box. The source electrode receives a source Radio Frequency (RF) from the external and generates plasma based on capacitive coupling within a vacuum chamber. The impedance box connects at one end to an outer circumference surface of the source electrode, and is grounded at the other end to the vacuum chamber, and controls an electric current flowing from the source electrode to the vacuum chamber by the source RF.
Public/Granted literature
- US20120032596A1 PLASMA SOURCE FOR LARGE SIZE SUBSTRATE Public/Granted day:2012-02-09
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