Invention Grant
US08268403B2 Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
有权
形成有机二氧化硅膜，有机二氧化硅膜，布线结构，半导体器件和成膜用组合物的方法
- Patent Title: Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation
- Patent Title (中): 形成有机二氧化硅膜，有机二氧化硅膜，布线结构，半导体器件和成膜用组合物的方法
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Application No.: US11596295Application Date: 2005-04-28
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Publication No.: US08268403B2Publication Date: 2012-09-18
- Inventor: Masahiro Akiyama , Hisashi Nakagawa , Tatsuya Yamanaka , Atsushi Shiota , Takahiko Kurosawa
- Applicant: Masahiro Akiyama , Hisashi Nakagawa , Tatsuya Yamanaka , Atsushi Shiota , Takahiko Kurosawa
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-141200 20040511; JP2005-050590 20050225
- International Application: PCT/JP2005/008223 WO 20050428
- International Announcement: WO2005/108468 WO 20051117
- Main IPC: B05D3/02
- IPC: B05D3/02
Abstract:
A method of forming an organic silica film includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying ultraviolet radiation.
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