Invention Grant
US08268411B2 Materials containing voids with void size controlled on the nanometer scale
有权
含有空隙尺寸在纳米尺度上的空隙的材料
- Patent Title: Materials containing voids with void size controlled on the nanometer scale
- Patent Title (中): 含有空隙尺寸在纳米尺度上的空隙的材料
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Application No.: US12538117Application Date: 2009-08-08
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Publication No.: US08268411B2Publication Date: 2012-09-18
- Inventor: Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
- Applicant: Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: B05D3/06
- IPC: B05D3/06
Abstract:
A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
Public/Granted literature
- US20090297729A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE Public/Granted day:2009-12-03
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