Silicon-on-insulator devices with buried depletion shield layer

Invention Grant

US08268697B2 Silicon-on-insulator devices with buried depletion shield layer 有权

Title translation: 具有掩埋耗尽屏蔽层的绝缘体上硅器件

Patent Title: Silicon-on-insulator devices with buried depletion shield layer
Patent Title (中): 具有掩埋耗尽屏蔽层的绝缘体上硅器件
Application No.: US12728058

Application Date: 2010-03-19
Publication No.: US08268697B2

Publication Date: 2012-09-18
Inventor: Donald R. Disney
Applicant: Donald R. Disney
Applicant Address: US CA San Jose
Assignee: Monolithic Power Systems, Inc.
Current Assignee: Monolithic Power Systems, Inc.
Current Assignee Address: US CA San Jose
Agency: Perkins Coie LLP
Main IPC: H01L21/00
IPC: H01L21/00

Abstract:

A silicon-on-insulator device with a with buried depletion shield layer.

Abstract(Chinese):

一种绝缘体上硅器件，具有埋入式耗尽屏蔽层。

Public/Granted literature

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备