Invention Grant
- Patent Title: Manufacturing method of bump structure with annular support
- Patent Title (中): 具有环形支撑的凸块结构的制造方法
-
Application No.: US13209456Application Date: 2011-08-15
-
Publication No.: US08268717B2Publication Date: 2012-09-18
- Inventor: Jing-Hong Yang
- Applicant: Jing-Hong Yang
- Applicant Address: BM Hamilton
- Assignee: ChipMOS Technologies (Bermuda) Ltd.
- Current Assignee: ChipMOS Technologies (Bermuda) Ltd.
- Current Assignee Address: BM Hamilton
- Agency: Jianq Chyun IP Office
- Priority: CN200710004497 20070116
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers.
Public/Granted literature
- US20110300705A1 MANUFACTURING METHOD OF BUMP STRUCTURE WITH ANNULAR SUPPORT Public/Granted day:2011-12-08
Information query
IPC分类: