Invention Grant
- Patent Title: Fabrication method of a non-planar transistor
- Patent Title (中): 非平面晶体管的制造方法
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Application No.: US13287131Application Date: 2011-11-02
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Publication No.: US08278184B1Publication Date: 2012-10-02
- Inventor: Ying-Tsung Chen , Chien-Ting Lin , Shih-Hung Tsai , Ssu-I Fu , Wen-Tai Chiang
- Applicant: Ying-Tsung Chen , Chien-Ting Lin , Shih-Hung Tsai , Ssu-I Fu , Wen-Tai Chiang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of forming a non-planar transistor is provided. A substrate is provided. The substrate has a plurality of isolation regions to be formed and a plurality of fin regions to be formed. A first etching process is performed to form a plurality of first trenches having a first depth in the substrate within the isolation regions. At least a doping region is formed in the substrate within the fin regions. A second etching process is performed to deepen the first depth to a second depth and a plurality of fin structures are formed in the substrate within the fin regions. Lastly, a gate is formed on the fin structures.
Information query
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