Invention Grant
- Patent Title: Method for thinning wafer
- Patent Title (中): 减薄晶圆的方法
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Application No.: US12874231Application Date: 2010-09-02
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Publication No.: US08278189B2Publication Date: 2012-10-02
- Inventor: Cheng-Yu Hsieh
- Applicant: Cheng-Yu Hsieh
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/30 ; H01L21/762
Abstract:
The present invention provides a method of thinning a wafer. First, a wafer is provided. The wafer includes an active surface, a back surface and a side surface. The active surface is disposed opposite to the back surface. The side surface is disposed between the active surface and the back surface and encompasses the peripheral of the wafer. Next, a protective structure is formed on the wafer to at least completely cover the side surface. Last, a thinning process is performed upon the wafer from the back surface.
Public/Granted literature
- US20120058623A1 Method for Thinning Wafer Public/Granted day:2012-03-08
Information query
IPC分类:
