Invention Grant
- Patent Title: Microelectromechanical system diaphragm and fabricating method thereof
- Patent Title (中): 微机电系统隔膜及其制造方法
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Application No.: US12196016Application Date: 2008-08-21
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Publication No.: US08280097B2Publication Date: 2012-10-02
- Inventor: Ming-I Wang
- Applicant: Ming-I Wang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H04R7/14
- IPC: H04R7/14

Abstract:
A microelectromechanical system diaphragm is provided. The microelectromechanical system diaphragm includes a substrate, a first conductive layer, a second conductive layer, a first dielectric layer, and a second dielectric layer. The first conductive layer is disposed on the substrate. The first conductive layer has a flexible portion in which a plurality of trenches is formed. The second conductive layer is disposed between the first conductive layer and the substrate, in which the flexible portion is located above the second conductive layer. The first dielectric layer is disposed between the second conductive layer and the substrate. The second dielectric layer is disposed between the substrate and a portion of the first conductive layer so as to suspend the flexible portion. Furthermore, at least one first opening is formed in the first conductive layer.
Public/Granted literature
- US20100044147A1 MICROELECTROMECHANICAL SYSTEM DIAPHRAGM AND FABRICATING METHOD THEREOF Public/Granted day:2010-02-25
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