Invention Grant
US08283941B2 Alternating current (AC) stress test circuit, method for evaluating AC stress induced hot carrier injection (HCI) degradation, and test structure for HCI degradation evaluation
有权
交流电压（AC）应力测试电路，评估AC应力诱发热载流子注入（HCI）降解的方法，以及HCI降解评估试验结构
- Patent Title: Alternating current (AC) stress test circuit, method for evaluating AC stress induced hot carrier injection (HCI) degradation, and test structure for HCI degradation evaluation
- Patent Title (中): 交流电压（AC）应力测试电路，评估AC应力诱发热载流子注入（HCI）降解的方法，以及HCI降解评估试验结构
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Application No.: US12703949Application Date: 2010-02-11
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Publication No.: US08283941B2Publication Date: 2012-10-09
- Inventor: Sung-Nien Kuo , Yuan-Yu Hsieh , Wen-Hsiung Ko , Jih-San Lee , Kuei-Chi Juan , Kuan-Cheng Su
- Applicant: Sung-Nien Kuo , Yuan-Yu Hsieh , Wen-Hsiung Ko , Jih-San Lee , Kuei-Chi Juan , Kuan-Cheng Su
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26
Abstract:
An AC stress test circuit for HCI degradation evaluation in semiconductor devices includes a ring oscillator circuit, first and second pads, and first and second isolating switches. The ring oscillator circuit has a plurality of stages connected in series to form a loop. Each of the stages comprises a first node and a second node. The first and second isolating switches respectively connect the first and second pads to the first and second nodes of a designated stage and both are switched-off during ring oscillator stressing of the designated stage. The present invention also provides a method of evaluating AC stress induced HCI degradation, and a test structure.
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